Semiconductor Devices, Materials, and Processing-Quantitative Measurements of Two-Dimensional Ultrashallow B Profiles in Si by Selective Chemical Etching

Data di pubblicazione: 1 Gen 2005

RivistaFonte dati: ARCHIVIO
Editore
New York, NY: Electrochemical Society, 1948-
Fonte
Journal of the Electrochemical Society
ID archivio
7b09193d2242019fdc4ea236f76dd040
Riferimenti
Volume: 152 Issue: 4 Pages: G277