Temperature sensor based on 4H-SiC diodes for hostile environments
Data di pubblicazione: 1 Feb 2015
A high-performance Proportional To Absolute Temperature (PTAT) sensor based on two integrated 4H-SiC Schottky diodes is presented. The linear dependence between the voltage differences across the forward-biased diodes and the temperature, in a range from 30°C up to 300°C, has been used for thermal sensing. A high sensitivity of 5.13 mV/°C at two constant bias currents has been measured.
