Type:
Conference
Description:
Incorporating InGaAs/GaAs/AlGaAs heterostructures creates a bi-layer electron and hole plasma producing a planar, top-illuminated photodetector with< 2.5-ps time response and sensitive to< 1-microWatt optical power, and can operate without applied bias.
Publisher:
Optical Society of America
Publication date:
6 Oct 2013
Biblio References:
Pages: FTu1E. 4
Origin:
Frontiers in Optics