The activity of material synthesis at IMM Roma has two main objectives: i. the development of low-dimension structures by using high yield, low-cost and low-temperature growth techniques; ii. the fabrication of inorganic and organic thin films for flexible and large area microelectronics. Particular interest is devoted to one-dimensional (1D) materials, such as Si nanowires , Si nanotubes ,SiO2 nanowires decorated by metallic nanoparticles, and ZnO nanorods suitable for several applications in the field of electronics, phtoonics, biological sciences, medical diagnosis and energy storage and harvesting . Thin film synthesis is employed for the fabrication of standard inorganic materials for microelectronics, including metals ((Au, Ag, Ti, Cr, Al, Ni,Pt, Cu etc.) and dielectrics (SiN, SiO2), polycrystalline Si and polymeric semiconductors (PEDOT, Pentacene).
Synthesis facilities in the clean-room environment
1. Plasma Enhanced Chemical Vapor Deposition (PECVD) and Electron Cyclotron Resonance –PECVD systems for silicon (Si) based materials: Si nanowires (Si NWs), planar amorphous Si, planar silicon nitride (SiN) and silicon dioxide (SiO2).