Owing to its superior electrical properties, such as a wide band gap (3.2 eV) and a high critical electric field (3MV/cm), Silicon Carbide (4H-SiC) is now considered the...
Power and High Frequencies Devices
Today, the steadily increasing need of electric power is a global concern that must be faced through an improvement of the energy efficiency (reduction of power consumption) in high-power and high-frequency electronics devices. The development of new technologies for energy efficient high-power and high-frequency devices is driven by strategic interests in different fields, e.g., energy conversion systems (photovoltaic, automotive, energy distribution,…), telecommunication, transportation, consumer electronics, etc.
Until now, most of power electronics devices have been based on silicon (Si). However, Si electronics has almost reached its physical limits and the introduction of new materials and technologies “beyond Si” has become mandatory. In addition, another important driving force for high-frequency components is the market of the microwave and millimeter wave signal processing, for civilian, military and space applications (satellites, radars, etc.).
In this context, wide band gap (WBG) semiconductors like Silicon Carbide (SiC), Gallium Nitride (GaN) and diamond, and other materials like GaAs, graphene and related 2D-materials, etc., are considered the materials of choice for the next generation of high efficient devices operating at high power, high frequency and under harsh environment (temperature, radiation, …).
CNR-IMM has a long term and internationally recognized experience in the field of materials and technologies for high-power and high-frequency devices.
The research activities are carried out in different research Units of IMM (Catania Headquarters, Bologna, Roma and Naples) and are currently focused in the following areas:
- Development of epitaxial growth process for 4H-SiC and 3C-SiC materials for power devices and new applications (like MEMS, detectors, etc.)
- Development and characterization of innovative processes and power devices in SiC and GaN (interfaces with metals and dielectrics for SiC and GaN devices, implantation and “non conventional” annealings for SiC selective doping, advanced processing for normally-off HEMTs transistors, new functional dielectrics and nano-laminates, etc.)
- High frequency components (like filters, oscillators, antennas, interferometric systems, electromagnetic sensors, etc.) based on Si, hydrogenated diamond or other materials (dielectrics, metamaterials, polymers etc.) for civil, military and aerospace applications.
- Novel devices integrating 2D-materials on WBG semiconductors for RF applications.
Part of the research is carried out in collaboration with the national semiconductor industry and has strong implications in the development of innovative processes and devices. The research teams are currently involved in several National and European projects (Challenge, WInSiC4AP, GraNitE, Grifone, KaBAS, DISSIPO, METAMEMS, ReMiDA).
Coordinator: Roccaforte Fabrizio
Gallium Nitride (GaN) and its related AlxGa1-xN ternary alloys have excellent properties (like a wide band gap, a high critical electric field and a high electron saturation...
The development of microsystems for telecommunications, and the related characterization techniques, has led to a growing demand on the feasibility of the technologies needed, especially...
IMM of Bologna studies the optimization of the electrical doping of single crystal 3C- and 4H-SiC poly-types by ion implantation. When the fabrication of SiC electronic devices is concerned, the...
In the actual Power Devices market, 4H-SiC is the emerging material. The main limitations for an extensive application of this SiC polytype in many power applications are the cost of the material...
Graphene (Gr) has been widely investigated in the last years as channel material for high frequency electronics. However, the lack of a band gap in Gr band-structure hinders its application in...