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Label-free imaging of lipid droplets in cells by stimulated Raman microscopy

Maria Antonietta Ferrara, Angela Filograna, Annalisa D'Arco, Rajeev Ranjan, Michele Larobina, Carmen Valente, Luigi Sirleto

2018-05-24

Biblio references: Volume: 10677 Pages: 106770P

Origin: Unconventional Optical Imaging

Implementation of stimulated Raman losses and stimulated Raman gain microscopy using three femtosecond laser sources

Rajeev Ranjan, Annalisa D'Arco, Maria Antonietta Ferrara, Maurizio Indolfi, Michele Larobina, Luigi Sirleto

2018-05-14

Biblio references: Volume: 10684 Pages: 106842J

Origin: Nonlinear Optics and its Applications 2018

Tunable lower-RIN Brillouin fiber ring laser for BOTDA sensing

Diego Marini, Leonardo Rossi, Filippo Bastianini, Gabriele Bolognini

2018-05-13

Biblio references: Pages: JW2A. 166

Origin: CLEO: QELS_Fundamental Science

Diatomite nanovectors uptake in cancer cells: a Raman imaging study

Ilaria Rea Stefano Managò, Nunzia migliaccio, Monica Terracciano, Michela Napolitano, Nicola Martucci, Luca De Stefano, Ivo Rendina, anna Chiara De Luca, Annalisa Lamberti

2018-05-01

Biblio references:

Origin: Biophotonics: Photonic Solutions for Better Health Care

Pillars fabrication by DSA lithography: material and process options

A Gharbi, P Pimenta-Barros, O Saouaf, G Reynaud, L Pain, R Tiron, C Navarro, C Nicolet, I Cayrefourcq, M Perego, F Pérez-Murano, E Amat, M Fernández-Regúlez

2018-03-19

Biblio references: Volume: 10586 Pages: 105860Q

Origin: Advances in Patterning Materials and Processes XXXV

A 48-spot single-molecule FRET setup with periodic acceptor excitation (Conference Presentation)

Antonino Ingargiola, Maya Segal, Angelo Gulinatti, Ivan Rech, Ivan Labanca, Piera Maccagnani, Massimo Ghioni, Shimon Weiss, Xavier Michalet

2018-03-14

Biblio references: Volume: 10500 Pages: 1050005

Origin: Single Molecule Spectroscopy and Superresolution Imaging XI

4 OAM x 4 WDM Optical Switching Based on an Innovative Integrated Tunable OAM Multiplexer

N Zhang, M Scaffardi, MN Malik, V Toccafondo, C Klitis, MPJ Lavery, G Meloni, F Fresi, E Lazzeri, D Marini, J Zhu, X Cai, S Yu, L Potì, G Preve, A Bogoni, M Sorel

2018-03-11

Biblio references: Pages: Th3H. 1

Origin: Optical Fiber Communication Conference

Study of Ti/Al/Ni Ohmic Contacts to p-Type Implanted 4H-SiC

Marilena Vivona, Giuseppe Greco, Corrado Bongiorno, Salvatore Di Franco, Raffaella Lo Nigro, Silvia Scalese, Simone Rascunà, Mario Saggio, Fabrizio Roccaforte

2018-01-01

Biblio references: Volume: 924 Pages: 377-380

Origin: Materials Science Forum

About the Electrical Activation of 1× 1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500-1950° C

Roberta Nipoti, Alberto Carnera, Giovanni Alfieri, Lukas Kranz

2018-01-01

Biblio references: Volume: 924 Pages: 333-338

Origin: Materials Science Forum

3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)

Francesco La Via, Fabrizio Roccaforte, Antonino La Magna, Roberta Nipoti, Fulvio Mancarella, Peter Wellman, Danilo Crippa, Marco Mauceri, Peter Ward, Leo Miglio, Marcin Zielinski, Adolf Schöner, Ahmed Nejim, Laura Vivani, Rositza Yakimova, Mikael Syväjärvi, Gregory Grosset, Frank Torregrosa, Michael Jennings, Philip A Mawby, Ruggero Anzalone, Salvatore Coffa, Hiroyuki Nagasawa

2018-01-01

Biblio references: Volume: 924 Pages: 913-918

Origin: Materials Science Forum

Label-free imaging of lipid droplets in cells by stimulated Raman microscopy

Implementation of stimulated Raman losses and stimulated Raman gain microscopy using three femtosecond laser sources

Tunable lower-RIN Brillouin fiber ring laser for BOTDA sensing

Diatomite nanovectors uptake in cancer cells: a Raman imaging study

Pillars fabrication by DSA lithography: material and process options

A 48-spot single-molecule FRET setup with periodic acceptor excitation (Conference Presentation)

4 OAM x 4 WDM Optical Switching Based on an Innovative Integrated Tunable OAM Multiplexer

Study of Ti/Al/Ni Ohmic Contacts to p-Type Implanted 4H-SiC

About the Electrical Activation of 1× 1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500-1950° C

3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)

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