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The electrical activity of Ge dangling bonds is investigated at the interface between GeO 2-passivated Ge (1 1 1) substrate and Al 2 O 3 grown by atomic layer deposition, by means of electrically detected magnetic resonance spectroscopy (EDMR). The Al 2 O 3/GeO 2/Ge stacked structure is promising as a mobility booster for the post-Si future electronic devices. EDMR proved to be useful in characterizing interface defects, even at the very low concentrations of state-of-the-art devices (< 10 10 cm− 2). In particular, it is shown that capping the GeO 2-passivated Ge (1 1 1) with Al 2 O 3 has no impact on the microstructure of the Ge dangling bond.
Publication date: 
1 Feb 2014

Stefano Paleari, A Molle, F Accetta, A Lamperti, E Cianci, M Fanciulli

Biblio References: 
Volume: 291 Pages: 3-5
Applied Surface Science