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Type: 
Journal
Description: 
Certain results of experimental investigations of recent years devoted to new materials of undergate dielectrics and gates for field-effect MOS transistors based on high-k metal oxides and metal layers, respectively, are presented. The laboratory technology of fabrication of a functional field-effect transistor based on the TaN/LaAlO3/Si structure is described briefly.
Publisher: 
SP MAIK Nauka/Interperiodica
Publication date: 
1 Jun 2010
Authors: 

AV Zenkevich, Yu Yu Lebedinskii, Yu A Matveev, NS Barantsev, Yu A Voronov, AV Sogoyan, VN Nevolin, VI Chichkov, S Spiga, M Fanchulli

Biblio References: 
Volume: 39 Issue: 3 Pages: 165-174
Origin: 
Russian Microelectronics