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Type: 
Conference
Description: 
A metal-semiconductor-metal capacitor with embedded two-dimensional charge is designed and fabricated. Capacitance-Voltage characteristics exhibit switchability with a large voltage sensitivity. Maximum and minimum capacitances outperform previous predictions with potential applicability in RFICs and VLSI for reducing the cross-talk among transmission lines and achievement of higher integrations. The device can replace bulky conductors with its negative capacitance feature. The large light sensitivity in the C-V makes this capacitor an ideal candidate for monolithic microwave-photonic integrated circuits.
Publisher: 
IEEE
Publication date: 
14 Oct 2012
Authors: 

Pouya Dianat, Richard W Prusak, Fabio Quaranta, Adriano Cola, Bahram Nabet

Biblio References: 
Pages: 1-4
Origin: 
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)