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Type: 
Journal
Description: 
Nanoscale dielectric films made of alumina grown by atomic layer deposition (ALD) have been implemented as high‐k dielectric material in organic light emitting transistors (OLETs). This leads to the reduction of both the threshold and operating bias regime of the devices while obtaining comparable light emission, when compared to our standard polymer‐based dielectric platform.
Publisher: 
Publication date: 
1 May 2016
Authors: 

Caterina Soldano, Gianluca Generali, Elena Cianci, Grazia Tallarida, Marco Fanciulli, Michele Muccini

Biblio References: 
Volume: 47 Issue: 1 Pages: 1737-1739
Origin: 
SID Symposium Digest of Technical Papers