The illustration on the back cover of this issue refers to the Editor's Choice article by Buick et al. on pp. 2027–2032. The authors discuss scanning confocal Raman spectroscopy on single as‐grown AlGaAs nanowires. The free‐standing nanowires were grown by Au‐catalyzed metal organic vapor phase epitaxy on (111)B‐GaAs substrates. The illustration shows a 3D representation of the total scattered intensity (Rayleigh micrograph) of an array of said nanowires. It allows to locate and select an individual nanowire for spectroscopic analysis. The authors show how the stoichiometry of single nanowires can be evaluated from the acquired Raman spectra with an accuracy below 10%. Measurements at different positions along the nanowire reveal variations of the stoichiometry. This non‐uniformity indicates a growth related internal structure of the nanowires.