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Type: 
Journal
Description: 
This work presents an alternative method for the formation of the top oxide in oxide-nitride-oxide structures. The method utilizes low-energy (1 keV) Si ion implantation into thin oxide-nitride stacks, followed by low temperature wet oxidation. Transmission electron microscopy examination clearly indicates the formation of a three-layer structure, verified also by Time-of flight secondary ion mass spectrometry. The electrical characteristics of the oxide-nitride-oxide stacks exhibit strong trapping effects and excellent retention characteristics resulting to a 1.5 V 10-year memory window at 125 °C.
Publisher: 
Elsevier
Publication date: 
1 Sep 2007
Authors: 

V Ioannou-Sougleridis, P Dimitrakis, V Em Vamvakas, P Normand, Caroline Bonafos, S Schamm, Nikolay Cherkashin, G Ben Assayag, M Perego, M Fanciulli

Biblio References: 
Volume: 84 Issue: 9-10 Pages: 1986-1989
Origin: 
Microelectronic engineering