We report the realization of highly sculptured 3-D silicon and SiO 2 nanowall structures on silicon substrates with a single masking layer using a hydrogen-assisted deep reactive ion etching process. By precisely controlling the passivation and etching steps, it is possible to achieve the desired 3-D featured silicon structures, which are bases for SiO 2 3-D nanowalls.
4 Feb 2011
Volume: 20 Issue: 2 Pages: 353-354
Journal of microelectromechanical systems