Atomic layer deposition (ALD) has received increasing attention in relation to the growth of high-permittivity( κ)(κ) rare-earth oxides for advanced gate stack applications. Transistor reliability strongly depends on the oxide/semiconductor interface properties. In this study, we perform transmission electron microscopy measurements in the high-resolution mode coupled with electron energy loss spectroscopy experiments to probe at the nanometric scale interface layer (IL) issues for ALD-grown La 2