We report on the static magnetic field dependence of the random telegraph signal in a submicrometer silicon n-metal-oxide-semiconductor field-effect transistor. Using intense magnetic fields and low temperatures, we find that the characteristic time ratio changes by three orders of magnitude when the field increases from 0 to 12 T. Similar behavior is found when the static field is either in plane or perpendicular to the two-dimensional electron gas. The experimental data deviate from a pure exponential trend and can be explained by considering a model that includes the triplet state of the trapping center and the polarization of the channel electron gas.