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Fe 3− δ O 4/MgO/Co magnetic tunnel junctions (MTJs) are synthesized on top of~ 1 inch Si/SiO 2 substrates by conducting a full in situ chemical vapour and atomic layer deposition process with no vacuum break. Tunnel magnetoresistance up to 6% is measured at room temperature, increasing to 12.5% at 120 K. Our results demonstrate the possibility of using full-chemical processes to synthesize functional MTJs, and this could provide a path towards the use of cost-effective methods to produce magnetic devices on a large scale.
IOP Publishing
Publication date: 
13 Feb 2014

R Mantovan, S Vangelista, B Kutrzeba-Kotowska, A Lamperti, N Manca, L Pellegrino, M Fanciulli

Biblio References: 
Volume: 47 Issue: 10 Pages: 102002
Journal of Physics D: Applied Physics