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Among the widespread range of applications in which ZrO 2 thin films are of interest, they are receiving a peculiar consideration as candidate replacement material in innovative microelectronic devices, such as non volatile memories. In this work, we deposited ZrO 2 films on Si (100) substrates by atomic layer deposition at 300 C from (MeCp) 2 ZrMe (OMe) as Zr precursor and using, H 2 O or O 3 as oxygen source. After deposition films were subjected to rapid thermal annealing at 800 C for 60 s in N 2. Film thickness is calculated from X-ray reflectivity to be in the 5–60 nm range. Grazing incidence X-ray diffraction reveals that the film crystallographic phase is highly influenced by the oxidizing agent used during the deposition process. While the use of H 2 O gives films consisting of mixed phases, the monoclinic phase is almost absent in films deposited employing O 3, which stabilize in the ZrO 2 cubic/tetragonal …
IOP Publishing
Publication date: 
18 Aug 2011

A Lamperti, L Lamagna, G Congedo, S Spiga

Biblio References: 
Volume: 158 Issue: 10 Pages: G221
Journal of The Electrochemical Society