We performed structural and electrical investigations on high temperature Fe implanted InP in order to correlate the lattice position of the implanted atoms after annealing treatments to their electrical activation as compensating deep traps. The overall results demonstrate that the Fe2+ deep trap activation properties are strictly connected to the annealing evolution of the lattice location of the Fe atoms in substitutional sites, which in turn is controlled by the background doping density in the substrates.
American Institute of Physics
10 Apr 2007
Volume: 893 Issue: 1 Pages: 241-242
AIP Conference Proceedings