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Type: 
Journal
Description: 
Low-temperature-grown GaAs (LT-GaAs) has a picosecond recombination lifetime, making a fast photodetector material but limiting carrier mobility and collection efficiency. Here, a metal-semiconductor-metal photodetector with a thin channel of regular-temperature GaAs (RT-GaAs) above LT-GaAs provides fast transit between contacts. A p-type delta doping layer below these layers produces a vertical electric field forcing optically generated electrons towards the channel. The AlGaAs/RT-GaAs heterojunction increases Schottky contacts, and the resulting 8–22 μm pitch photodetectors have low (
Publisher: 
AIP
Publication date: 
14 Nov 2011
Authors: 

Marc Currie, Fabio Quaranta, Adriano Cola, Eric M Gallo, Bahram Nabet

Biblio References: 
Volume: 99 Issue: 20 Pages: 203502
Origin: 
Applied Physics Letters