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In this letter, we investigate bipolar resistive switching of CuTCNQ-based memory cells in which various types of oxides are incorporated as dedicated switching layer (SL) in a bottom electrode\oxide\CuTCNQ\top electrode configuration. The bottom electrode was Pt as well as n + Si. As oxide SL, we used Al 2 O 3 , HfO 2 , ZrO 2 , and SiO 2 . Au was employed as the top electrode. The basic memory characteristics appear to be independent of the type of oxide used. This gives clear indication that the materials investigated as SL mainly act as matrix in which conductive channels are formed and dissolved.
Publication date: 
12 May 2009

Robert Muller, Christoph Krebs, Ludovic Goux, Dirk J Wouters, Jan Genoe, Paul Heremans, Sabina Spiga, Marco Fanciulli

Biblio References: 
Volume: 30 Issue: 6 Pages: 620-622
IEEE electron device letters