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Type: 
Journal
Description: 
Properties of ZnO films grown by atomic layer deposition at low temperature are described. By selecting appropriate precursors and their pulses we obtained films with controlled electrical properties – from heavily n-type to p-type. Parameters of constructed Schottky and p–n junction are good enough for their application in a new generation of memory devices with cross-bar architecture.
Publisher: 
Elsevier
Publication date: 
1 Dec 2008
Authors: 

M Godlewski, E Guziewicz, J Szade, A Wójcik-Głodowska, T Krajewski, K Kopalko, R Jakieła, S Yatsunenko, E Przeździecka, P Kruszewski, N Huby, G Tallarida, S Ferrari

Biblio References: 
Volume: 85 Issue: 12 Pages: 2434-2438
Origin: 
Microelectronic Engineering