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We investigate the pattern transfer on oxide substrates of lithographic masks with nanometer dimensions. The nanomasks are realized through the Lithography based on block CoPolymers self-assembling (LCP). LCP is low cost, VLSI compatible and allows the formation of controlled and highly dense nanofeatures at wafer scale. The pattern transfer to a hard mask is an important step for many applications, and it is usually pursued by dry etch. However it is critical step due to the small size and chemical instability of the copolymer which acts as the resist. In this work a process of dry etch based on reactive ion etching is studied. The chemistry used is CF 4 diluted with N 2. The dilution is found to optimize the oxide/copolymer etch selectivity, thanks to the polymerization effect of the CF x radicals on the mask. The experimental data are discussed in the framework of a model which takes into account the impinging …
IOP Publishing
Publication date: 
14 Aug 2012
Biblio References: 
Volume: 1 Issue: 3 Pages: Q52
ECS Journal of Solid State Science and Technology