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Type: 
Journal
Description: 
We characterize SnO2:F/p-type a-Si:H/Mo structures by current-voltage (I-V) and capacitance-voltage (C-V) measurements at different temperatures to determine the transport mechanism in the SnO2:F/p-type a-Si:H heterojunction. The experimental I-V curves of these structures, almost symmetric around the origin, are ohmic for |V|
Publisher: 
AIP
Publication date: 
15 Jul 2011
Authors: 

G Cannella, F Principato, M Foti, S Di Marco, A Grasso, S Lombardo

Biblio References: 
Volume: 110 Issue: 2 Pages: 024502
Origin: 
Journal of Applied Physics