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Type: 
Conference
Description: 
Research on band-gap engineering of Silicon-Germanium heterostructures for the realization of Quantum Cascade (QC) structures emitting in the Terahertz (THz) spectral region has recently attracted a vast interest. While several successful attempts have been reported using hole-based (p-type) intersubband transitions, very few results have been published on systems exploiting electrons (n-type). In this work we present the optical and structural characterization of n-type heterostructures made either of tensely-strained Si (sSi) quantum well (QW) confined between low Ge content Si1-xGex barriers [0.2
Publisher: 
IEEE
Publication date: 
26 Jul 2009
Authors: 

M De Seta, G Capellini, G Ciasca, Y Busby, F Evangelisti, G Nicotra, M Nardone, M Ortolani, Michele Virgilio, Giuseppe Grosso, A Nucara, P Calvani

Biblio References: 
Pages: 513-514
Origin: 
2009 9th IEEE Conference on Nanotechnology (IEEE-NANO)