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Highly manufacturable/low aspect ratio Si Nano Floating Gate FinFET memories: high speed performances and improved reliability

Type: 
Conference
Description: 
In this work we have studied sub-50 nm finFET nano-floating gate (NFG) Flash (FINFLASH) memory cells. Si nanocrystals have been used as NFG storage medium. Very low aspect ratio FINFLASH cells with fin height down to 20 nm have been investigated.
Publisher: 
IEEE
Publication date: 
26 Aug 2007
Authors: 

C Gerardi, S Lombardo, G Cina, E Tripiciano, D Corso, V Ancarani, G Iacono, C Bongiorno, C Garozzo, P Barbera, GA Costa, C Coccorese, M Vecchio, E Rimini, M Melanotte

Biblio References: 
Pages: 44-45
Origin: 
2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop
Link: 
https://ieeexplore.ieee.org/abstract/document/4290574/

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