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The low temperature evolution of point defects induced in SiC by ion irradiation was investigated by deep level transient spectroscopy. The defects were introduced by irradiation with a 7.0 MeV beam of C+ ions at a fluence of 6 × 109 cm− 2. Annealing was then performed in the temperature range of 330–400 K in order to study the change in point defect structure with temperature. The low temperature annealing performed was observed to induce a change in the produced defects. The deep levels related to the Sx (EC − 0.6 eV) and S2 defects (EC − 0.7 eV) recovered with annealing while, simultaneously, a new level, S1 (EC − 0.4 eV), was formed. The activation energy of the S1 defect is 0.94 eV, while the annealing of both the Sx and S2 levels occurred with activation energy of 0.65 eV.
Publication date: 
1 Jan 2009

G Litrico, G Izzo, L Calcagno, F La Via, G Foti

Biblio References: 
Volume: 18 Issue: 1 Pages: 39-42
Diamond and related materials