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Type: 
Journal
Description: 
Threshold voltage ( V th ) and drain-source current ( I DS ) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. V th loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ during irradiation with photons and ions reveal a step-like increase of I DS with the total irradiation dose. A brief physical explanation is also provided.
Publisher: 
IEEE
Publication date: 
1 Dec 2012
Authors: 

Sebania Libertino, Domenico Corso, Michael Lisiansky, Yakov Roizin, Felix Palumbo, Fabio Principato, Calogero Pace, Paolo Finocchiaro, Salvatore Lombardo

Biblio References: 
Volume: 59 Issue: 6 Pages: 3016-3020
Origin: 
IEEE Transactions on Nuclear Science