Doping incorporation and good uniformity along the wafer it is a mandatory for application in high voltage electronic devices. In this work the effect of the Hydrogen (H) flux position inside the reaction chamber on homo-epitaxial 4H-SiC growth process has been studied. Capacitance-Voltage and FT-IR analyses show as the different position of the gas injector affect the doping and thickness uniformity and profile. On the other hand, By Candela and AFM analyses no morphological or surface influence by Hydrogen flux position has been observed.