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Micro‐ and nano‐electromechanical systems (MEMS and NEMS) fabricated in 3 C‐SiC are receiving particular attention thanks to the material physical properties: its wide band gap (2.3 eV), its ability to operate at high temperatures, its mechanical strength and its inertness to the exposure in corrosive environments. However, high residual stress (which is normally generated during the hetero‐epitaxial growth process) makes the use of 3 C‐SiC in Si‐based MEMS fabrication techniques very limited leading to a failure of micro‐machined/sensor structures.In this paper, micro‐Raman characterizations and finite‐element modeling (FEM) of microstructures realized on poly and single‐crystal (100) 3 C‐SiC/Si films are performed. Transverse optical (TO) Raman mode analysis reveals the stress relaxation on the free standing structure (796.5 cm−1) respect to the stressed unreleased region (795.7 cm−1). Also …
Publication date: 
1 Feb 2013

N Piluso, R Anzalone, M Camarda, A Severino, A La Magna, G D'Arrigo, F La Via

Biblio References: 
Volume: 44 Issue: 2 Pages: 299-306
Journal of Raman Spectroscopy