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Type: 
Journal
Description: 
Continuous downscaling of complementary metal-oxide semiconductor devices requires the manufacture of highly doped ultrashallow junctions. A preamorphizing implant (PAI) is commonly used in industrial processing in order to avoid unfavorable profile broadening and channeling tails during dopant atom implant in the ultralow energy regime (
Publisher: 
AIP
Publication date: 
15 Nov 2006
Authors: 

L Capello, TH Metzger, M Werner, JA Van Den Berg, M Servidori, L Ottaviano, C Bongiorno, G Mannino, T Feudel, M Herden, V Holý

Biblio References: 
Volume: 100 Issue: 10 Pages: 103533
Origin: 
Journal of applied physics