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Type: 
Journal
Description: 
In this paper, we report a purposely designed instrumentation and a jump detection procedure for the measurement of single-electron phenomena in solid-state nonvolatile memories based on a silicon nanocrystal floating gate metal-oxide-semiconductor field-effect transistor. The stepwise evolution of the drain current of a memory cell after a ldquowriterdquo operation is monitored by means of a purposely designed low-noise acquisition system with a bandwidth of up to 10 kHz. The advantage of the measurement system background noise and bandwidth over a traditional semiconductor parameter analyzer performance is evident in the detection and classification of single-electron events.
Publisher: 
IEEE
Publication date: 
7 Jan 2008
Authors: 

Calogero Pace, Gino Giusi, Felice Crupi, Salvatore A Lombardo

Biblio References: 
Volume: 57 Issue: 2 Pages: 364-368
Origin: 
IEEE Transactions on Instrumentation and Measurement