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Article PreviewArticle PreviewArticle PreviewThe defects produced by irradiation with 7 MeV C+ induce a change in the electrical properties of 4H-SiC Schottky diodes. Capacitance-voltage and Current-voltage characteristics of the diodes fabricated in epilayers doped with different nitrogen concentrations were monitored before and after irradiation with different fluences. The Capacitance-voltage curves show free carrier compensation after low fluence irradiation and it was found that the reduction of carriers per ion induced vacancy increases with nitrogen content. The forward current-voltage characteristics of the diodes show an increase in the series resistance after irradiation. This change is mainly related to the high compensation occurring around the end of the ion range.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2009

Gaetano Izzo, Grazia Litrico, Lucia Calcagno, Gaetano Foti, Francesco La Via

Biblio References: 
Volume: 600 Pages: 619-622
Materials Science Forum