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Advantages of the FinFET architecture in SONOS and nanocrystal memory devices

Type: 
Conference
Description: 
Double-gate and tri-gate FinFET type memories with nitride (SONOS-like) or Si nanocrystals storage with minimum feature sizes of 10 nm were realized. Strong performance advantages in program / erase characteristics and reliability deeply linked to the FinFET architecture are demonstrated.
Publisher: 
IEEE
Publication date: 
10 Dec 2007
Authors: 

S Lombardo, C Gerardi, L Breuil, C Jahan, L Perniola, G Cina, D Corso, E Tripiciano, V Ancarani, G Iannaccone, G Iacono, C Bongiorno, J Razafindramora, C Garozzo, P Barbera, E Nowak, R Puglisi, GA Costa, C Coccorese, M Vecchio, E Rimini, J Van Houdt, B De Salvo, M Melanotte

Biblio References: 
Pages: 921-924
Origin: 
2007 IEEE International Electron Devices Meeting
Link: 
https://ieeexplore.ieee.org/abstract/document/4419102/

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