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Type: 
Journal
Description: 
The electrical characteristics of 4H–SiC Schottky diodes were performed in the temperature range 80–700 K, in order to determine the temperature dependence of the drift mobility. At room temperature, a value of 724 cm2/(V s) was found, which decreased to 48.6 cm2/(V s) at 700 K. In the temperature range 200–700 K, a dependence of the mobility as T−3 was determined, that can be correlated to the presence of material defects.
Publisher: 
Elsevier
Publication date: 
1 Jan 2006
Authors: 

G Galvagno, F Roccaforte, A Ruggiero, L Calcagno, E Zanetti, M Saggio, F Portuese, F La Via

Biblio References: 
Volume: 83 Issue: 1 Pages: 45-47
Origin: 
Microelectronic engineering