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Type: 
Journal
Description: 
In this paper, we study the metal-catalyzed synthesis of Si nanowires (Si-NWs) in a plasma based chemical vapor deposition system. In these deposition systems due to the high efficiency of precursor molecule dissociation, both uncatalyzed and catalyzed growth mechanisms can take place. The first one gives rise to the formation of the quasi one-dimensional (1D) Si-NWs, while the second one to a continuous two-dimensional (2D) Si layer over the substrate or on the nucleated Si-NWs. The Si-NWs formation is then the result of the competition between these two processes. The control parameters ruling these two contributions are here explored. Samples with different weights of 1D and 2D growth are deposited and characterized by using a plasma based chemical vapor deposition apparatus operating at T 
Publisher: 
AIP
Publication date: 
7 Jun 2013
Authors: 

C Garozzo, A La Magna, G Mannino, V Privitera, S Scalese, PM Sberna, F Simone, RA Puglisi

Biblio References: 
Volume: 113 Issue: 21 Pages: 214313
Origin: 
Journal of Applied Physics