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Type: 
Journal
Description: 
In this paper, some aspects of the electrical characterization of trapping phenomena occurring at interfaces between insulators and wide band semiconductors (WBG) are presented, with a focus on the SiO 2/SiC and SiO 2/GaN systems. In particular, time resolved capacitance, current measurements, and parallel conductance measurements as a function of frequency were correlated to investigate trapping states in SiC and GaN MOS-structures, allowing to distinguish between slow and fast states in these systems. Furthermore, gate ...
Publisher: 
Publication date: 
1 Oct 2016
Authors: 

Patrick Fiorenza, Giuseppe Greco, Marilena Vivona, Filippo Giannazzo, Salvatore Di Franco, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Biblio References: 
Origin: 
physica status solidi (a)