CaCu3Ti4O12 (CCTO) thin films have been successfully deposited by Metal Organic Chemical Vapor Deposition (MOCVD) technique. An appealing approach based on a molten multi-component precursor source has been applied. The molten mixture consists of the Ca (hfa) 2• tetraglyme, Ti (tmhd) 2 (O-iPr) 2, and Cu (tmhd) 2 [Hhfa= 1, 1, 1, 5, 5, 5-hexafluoro-2, 4-pentanedione; tetraglyme= 2, 5, 8, 11, 14-pentaoxapentadecane; Htmhd= 2, 2, 6, 6-tetramethyl-3, 5-heptandione; O-iPr= iso-propoxide] precursors. Film complete structural and morphological characterizations have been carried out using several techniques [X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM)]. The dielectric properties have been evaluated at microscopic as well as at nanoscopic scale by scanning impedance microscopy.