-A A +A
4H-SiC epitaxial layers have been grown using trichlorosilane (TCS) as the silicon precursor source together with ethylene as the carbon precursor source. A higher C/Si ratio is necessary compared with the silane/ethylene system. This ratio has to be reduced especially at higher Si/H2 ratio because the step-bunching effect occurs. From the comparison with the process that uses silane as the silicon precursor, a 15% higher growth rate has been found using TCS (trichlorosilane) at the same Si/H2 ratio. Furthermore, in the TCS process, the presence of chlorine, that reduces the possibility of silicon droplet formation, allows to use a high Si/H2 ratio and then to reach high growth rates (16* m/h). The obtained results on the growth rates, the surface roughness and the crystal quality are very promising.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2006

Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Abbondanza, F Portuese, Giovanni Abagnale, Gian Luca Valente, Danilo Crippa, Milo Barbera, Ricardo Reitano, Gaetano Foti, Francesco La Via

Biblio References: 
Volume: 527 Pages: 179-182
Materials science forum