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Article PreviewArticle PreviewArticle PreviewRaman microscopy has been used to study transport properties in hetero-epitaxial 3C-SiC/Si thin films. By an accurate analysis of the Longitudinal Optic phonon-plasmon coupled (LOPC) modes in n-type doped 3C-SiC films, free carrier density and mobility has been determined. A study of doped 3C-SiC reveals a strong relationship between the calculated free carrier density and both the C/Si ratio used during the epitaxial process and Silicon substrates orientation on which 3C-SiC thin films were grown (maintaining the N2 gas flow rate). The free carrier density obtained is in the range between 5x1016 cm-3 and 4x1018 cm-3. Epitaxial films grown on (111) Si substrates show a higher free carrier density and a lower dependence on C/Si ratios as compared to films grown on (100) Si substrates.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2010

Nicolò Piluso, Andrea Severino, Massimo Camarda, Ruggero Anzalone, Andrea Canino, Giuseppe Condorelli, Giuseppe Abbondanza, Francesco La Via

Biblio References: 
Volume: 645 Pages: 255-258
Materials Science Forum