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Type: 
Journal
Description: 
In this letter, we demonstrate that helium high-dose implantation is able to produce voids in GaN and we describe the behavior of material dislocations under these conditions. Two main types of nanovoids are encountered after annealing: cylindrical and pyramidal nanovoids. During their thermal evolution, these vacancy-type defects are interacting with dislocations favoring their local annihilation. The experimental results demonstrate a short-range interaction between nanovoid layer and dislocations, thus having potential applications for the improvement of GaN epitaxial layers quality.
Publisher: 
AIP
Publication date: 
23 May 2005
Authors: 

D Alquier, C Bongiorno, F Roccaforte, V Raineri

Biblio References: 
Volume: 86 Issue: 21 Pages: 211911
Origin: 
Applied Physics Letters