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Here we provide an overview on the crucial role played by the early stages of Ni‐Si interaction on the reaction process and on the scalability of the reaction products. During the early stages, a precursor layer (a Ni‐Si mixed layer) is formed at the deposition stage, whose properties can be tuned in a proper and convenient way. With this method, transrotational Ni‐silicide layers can be formed on [001] silicon substrate in a wide range of conditions. A transrotational structure represents an alternative order status possible for thin films allowing them to release the strain accumulated in the attempt to realise a hetero‐epitaxial couplings with the substrate. Transrotational layers offer wide reaction and structural stability windows as well as a good electrical behaviour. Their scalability down to 14 nm was tested, and it was verified that the layer performances are even preserved if compared to reference poly‐thick layers (e …
Publication date: 
1 Jan 2014

Alessandra Alberti, Corrado Bongiorno, Corrado Spinella, Antonino La Magna

Biblio References: 
Volume: 11 Issue: 1 Pages: 164-168
physica status solidi (c)