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Two miscut directions of (111) Si substrate on 3C-SiC heteroepitaxial growth have been studied with the resulting 3C-SiC stress and defects as a function of miscut axis direction toward [110] and [112] of (111) Si analyzed. We studied this dependency from an experimental point of view, investigating the structural properties of 3C-SiC, and using a kinetic Monte Carlo method on superlattice to confirm our experimental findings with numerical simulations. Residual stress and stacking fault density were halved by growing on a (111) Si substrate off-cut toward the [110] direction. A different surface morphology was revealed between the two inclinations.
American Institute of Physics
Publication date: 
9 Mar 2009

A Severino, M Camarda, G Condorelli, LMS Perdicaro, R Anzalone, M Mauceri, A La Magna, F La Via

Biblio References: 
Volume: 94 Issue: 10 Pages: 101907
Applied physics letters