We show and discuss some general features of dielectric breakdown of ultra-thin gate oxides for CMOS. We discuss III-V devices with high-k/metal gate, and compare to more classical structures with silicon substrates, SiOxNy or high-k as gate dielectrics, and poly-Si or metal gate. A model of the breakdown growth dependence on voltage, temperature, oxide thickness, etc., is discussed and compared to data.
19 Apr 2015
Pages: 5A. 1.1-5A. 1.6
2015 IEEE International Reliability Physics Symposium