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Type: 
Journal
Description: 
In the last few years silicon carbide (SiC) has emerged as a suitable material for the fabrication of ultraviolet light detectors due to lower leakage current, intrinsic visible blindness and mature process technology. In this paper we report on the electro-optical characteristics of continuous thin metal film Ni 2 Si/4H-SiC photodiodes with very low surface epilayer doping properly designed for ultraviolet (UV) sunlight monitoring.
Publisher: 
IOP Publishing
Publication date: 
2 Dec 2014
Authors: 

M Mazzillo, A Sciuto, S Marchese

Biblio References: 
Volume: 9 Issue: 12 Pages: P12001
Origin: 
Journal of Instrumentation