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Type: 
Conference
Description: 
We investigated the role of Nitrogen in the luminescence emission of amorphous SiOxNy layers irradiated by Infrared Laser. Variable content of Nitrogen (0-22%) has been obtained by magnetron sputtering or plasma enhanced chemical vapor deposition techniques. We demonstrate that emission is obtained from the amorphous matrix and the emission peak shifts towards longer wavelengths with increasing the N concentration. The peak shift is associated with the formation of O-Si-N chemical combinations. In contrast, no red shift was observed when N is absent.
Publisher: 
IEEE
Publication date: 
12 Oct 2014
Authors: 

Rosa Ruggeri, Giovanni Mannino, Antonella Sciuto, Lucia Romano, Fortunato Neri, Vittorio Privitera

Biblio References: 
Pages: 31-33
Origin: 
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC)