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Article PreviewArticle PreviewArticle PreviewSiC is a candidate material for micro-and nano-electromechanical systems (MEMS and NEMS). In order to understand the impact that the growth rate has on the residual stress of CVD-grown 3C-SiC hetero-epitaxial films on Si substrates, growth experiments were performed and the resulting stress was evaluated. Film growth was performed using a two-step growth process with propane and silane as the C and Si precursors in hydrogen carrier gas. The film thickness was held constant at~ 2.5 µm independent of the growth rate so as to allow for direct films comparison as a function of the growth rate. Supported by profilometry, Raman and micro-machined free-standing structures, this study shows that the growth rate is a fundamental parameter for low-defect and low-stress hetero-epitaxial growth process of 3C-SiC on Si substrates. Stress analysis performed by modify …
Trans Tech Publications Ltd
Publication date: 
1 Jan 2012

Ruggero Anzalone, M Camarda, C Locke, J Carballo, N Piluso, G D'Arrigo, A Severino, AA Volinsky, SE Saddow, F La Via

Biblio References: 
Volume: 717 Pages: 521-524
Materials Science Forum