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Type: 
Conference
Description: 
The integration of silicon nanocrystal (Si-nc) nonvolatile memory (NVM) arrays with HfAlOx based interpoly dielectric (IPD) is presented for the first time. The data obtained on array vehicles programmed in Fowler-Nordheim operation regime are in excellent agreement with previously presented results on single cells, as well as theoretical data and allow the evaluation of the scalability of the Si-nc concept.
Publisher: 
IEEE
Publication date: 
18 May 2008
Authors: 

G Molas, M Bocquet, J Buckley, H Grampeix, JP Colonna, L Masarotto, F Martin, M Gely, B De Salvo, S Deleonibus, DS Golubovic, MJ van Duuren, C Bongiorno, S Lombardo

Biblio References: 
Pages: 64-67
Origin: 
2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design