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We demonstrated that the timescale for Si quantum dot (Si-QD) formation in a SiOxNy layer is a few milliseconds by IR laser irradiation. The amount of Si agglomerated into QD in a laser irradiated SiOxNy layer is comparable to that calculated after furnace annealing at 1250 °C for 30 min. However, we found that crystalline Si-QD can be formed by laser only if the amount of Si atoms in excess is as high as 1×1022/cm3. The Si-QD contains impurities like N and O that prevent luminescence at 900 nm. The photoluminescence (PL) signal is recorded only after an additional annealing after laser irradiation at temperatures above 1000 °C when diffusion-assisted replacement of N and O occurs.
American Institute of Physics
Publication date: 
15 Jan 2010

Giovanni Mannino, Corrado Spinella, Corrado Bongiorno, Giuseppe Nicotra, Flora Mercorillo, Vittorio Privitera, Giorgia Franzò, Alberto Maria Piro, MariaGrazia Grimaldi, Maria Ausilia Di Stefano, Silvestra Di Marco

Biblio References: 
Volume: 107 Issue: 2 Pages: 023703
Journal of Applied Physics