The electrical properties of dopants in Si are of primary importance for the realization of electronic devices. Indium represents a promising p-type dopant whose electrical properties are improved by codoping with C. From theoretical studies In and C are expected to pair in the Si matrix in order to lower the strain energy. In this contribution we provide the first direct experimental determination of the sites of In and In–C complexes in Si.
22 May 2006
Volume: 88 Issue: 21 Pages: 212102
Applied physics letters