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The conduction mechanisms and trapping effects at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors (MOSFETs) were studied by Fowler-Nordheim (FN) tunnelling and frequency dependent conductance measurements. In particular, the analysis of both MOS capacitors and MOSFETs fabricated on the same wafer revealed an anomalous FN behavior on p-type implanted SiC/SiO2 interfaces. The observed FN instability upon subsequent voltage sweeps was correlated to the charge-discharge of hole trap states close the valence band edge of 4H-SiC. The charge-discharge of these traps also explained the recoverable threshold voltage instability observed in lateral MOSFETs.
AIP Publishing LLC
Publication date: 
6 Oct 2014

Patrick Fiorenza, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Fabrizio Roccaforte

Biblio References: 
Volume: 105 Issue: 14 Pages: 142108
Applied Physics Letters